| 摘要 |
PROBLEM TO BE SOLVED: To efficiently inspect crystal defects inside a semiconductor laser diode device. SOLUTION: A wafer 1 whereon chips of the semiconductor laser diode device are integrated is placed on a sample table 10. Then, laser light is irradiated on the wafer 1 by means of a laser light scanner 20 and the light irradiation position is changed rapidly, that is, the wafer 1 is rapidly scanned over. During scanning, a thermoelectromotive force current generated in the wafer 1 is measured by an electromotive force current amplifier/detector 32, and a laser irradiation position when the thermoelectromotive force current exceeding a prescribed threshold value is generated is determined by a defective address determination section 36, and the irradiation position is stored as defective address information in a defective address storage section 37. COPYRIGHT: (C)2005,JPO&NCIPI
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