| 摘要 |
A page buffer of a flash memory device is provided to prevent program operation error by directly inputting data from a second latch without transmitting data from a first latch to the second latch. A bit line selection part(110) precharges an even or an odd bit line by being connected to the even and odd bit lines of a memory cell array, and connects one of the even or odd bit line to a sensing node. A precharge part(120) is connected between a power supply voltage port and the sensing node, and enables the sensing node to maintain a fixed potential by a precharge signal. A register(130) stores program data by enabling one latch during a program operation by being connected between the sensing node and an input/output port, and then transmits the program data to the memory cell array through the sensing node and the even or odd bit line in response to a program signal.
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