Electrical chemical plating process

摘要

An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.

主权项

1. An electrical chemical plating process, comprising:
providing a semiconductor structure in an electro-plating machine; providing a pre-electro-plating step, wherein the pre-electro-plating step is performed under a fixed voltage condition and lasts for 0.2 to 0.5 seconds after the current exceeds a threshold current of the electro-plating machine and under a current which is gradually increased and stops at a maximum value, wherein the current in the pre-electro-plating step never exceeds the maximum value; and after the pre-electro-plating step, performing a first-electro-plating step.