Silicon substrate including an edge portion, epitaxial structure including the same, and method of manufacturing the silicon substrate

摘要

Crack formation and propagation in a silicon substrate may be reduced by forming a crack reducing portion. The silicon substrate includes a silicon main portion and a silicon edge portion formed around the silicon main portion. The crack reducing portion is formed on the silicon edge portion of the silicon substrate such that the directions of crystal faces in the crack reducing portion are randomly oriented.

主权项

1. A silicon substrate comprising:
a silicon edge portion around a silicon main portion, the silicon main portion having a first flat top surface and the silicon edge portion having a second flat top surface, the second flat top surface being separate from the first flat top surface; and a crack reducing portion on the second flat top surface of the silicon edge portion such that directions of crystal faces of the crack reducing portion are different, wherein an interface between the silicon edge portion and the crack reducing portion is flat.