| 摘要 |
<p>PURPOSE:To protect an electrode on a ridge from being removed by resist removing liquid after the ridge is formed by a method wherein an ohmic electrode material layer is formed on a semiconductor substrate with a laser composition and the substrate is sintered at the temperature lower than the ohmic contact forming temperature. CONSTITUTION:An ohmic electrode material layer 17 is formed on a semiconductor substrate 11 with a laser composition and the substrate 11 is sintered at the temperature lower than the ohmic contact forming temperature to improve the adhesiveness between the ohmic electrode material 17 and the semiconductor substrate 16. Then the ohmic electrode material 17 is patterned and a ridge is formed and finally the temperature is increased to the temperature at which an ohmic contact 19 is formed to form the electrode. If the temperature of the ohmic electrode material layer 17 is raised to the ohmic contact forming temperature, the surface becomes uneven and the ridge can not be formed with a good accuracy.</p> |
