| 摘要 |
PURPOSE:To obtain a light emitting diode characterized by high light output power and high-speed light response, by doping specified impurities in at least one of carrier barrier layers, which are in contact with an active layer. CONSTITUTION:On an N-type InP substrate 1, an N-type InP layer 2, a P-type InxGa1-xAsyP1-y layer 3, a P-type InP layer 4 and an N-type InxGa1-xAsyP1-y layer 5 are grown by a solution growing method. The layer 3 is an active layer. The layers 2 and 4 are carrier barrier layers, whose band gap is larger than the active layer 3. The layer 5 is a surface layer. Zn is diffused from the surface of the layer 5 into the layer 4, and a diffused region (P-type) 6 is formed. Electrodes 7 and 8 are formed on the region 6 and the substrate 1, respectively. Positive and negative biases are applied to the electrodes 7 and 8, and electrons and holes are injected into the layer 3 from the layers 2 and 4, respectively, and light emitting recombination occurs. Impurities, whose conducting type is different from that of at least one of the barrier layers 2 and 4, impurities, which impart a deep level, and at least one kind of III-group or V-group elements other than the crystal base materials of the layers 2 and 4 are doped in at least one of the barrier layers 2 and 4. Thus the light response becomes quick. |
