| 摘要 |
<p>PURPOSE:To enhance the numerical aperture and to achieve high sensitivity, by providing an upper layer, in which optical sensors are formed on a crystal layer comprising an insulating layer and a different kind of minute material, on a lower layer, in which elements constituting a circuit part are formed. CONSTITUTION:A bipolar transistor TR 102 as the first layer is formed on a substrate 101. A different kind of material 113, whose core forming density is sufficiently larger than that of SiO2, is minutely formed on a interlayer insulating layer 111. A gate insulating layer is formed on a p-type single crystal Si layer 114. Then, a gate electrode 115 is formed by patterning. Then, source and drain regions are formed by the diffusion of n-type impurities. An interconnection is formed, and the second layer comprising a TR 103 is formed. An interlayer insulating layer 116 is formed on the second layer. A different kind of material 118 is minutely formed. An n-type single crystal Si layer 119 is formed. In the layer 119, p-type impurities are diffused and a p-type region 120 is formed. Thus a photodiode 104 having a p-n junction is obtained. A plurality of the diodes 104 are formed as the uppermost layer. The incident light is effeciently inputted. Thus the sensor having high sensitivity is constituted.</p> |
