| 摘要 |
A threshold device for protecting electrical circuits from voltage transients e.g. the electromagnetic pulse or eletrostatic discharge transients is formed from an amorphous selenium/arsenic/germanium composition, preferably having 15 to 75 atomic % selenium, 10 to 65 atomic % arsenic and 5 to 35 atomic % germanium. The devices can switch from a high resistance state to a low resistance state with a very fast switch time and so pass the transient pulse to earth before reverting to their high resistance state. The devices can withstand very high electrical energies before they latch in their low resistance state. |
