| 摘要 |
<p>A zapping diode comprises an active p-n junction (13) between a low-resistant n-area (8) as a cathode and a low-resistant p-area (9) as an anode which are both arranged within a high-resistance n-well (2) formed in a p-conducting silicon substrate (1). The width dimension of the active p-n junction (13) transversely to the current direction is delimited in a reproducible manner by a self-adjusting implantation of the low-resistant n-and p-areas (8,9) through a polysilicon mask (10). <IMAGE></p> |
