发明名称 |
Oxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layers |
摘要 |
The present disclosure pertains to our discovery that depositing various film layers in a particular order using a combination of Ion Metal Plasma (IMP) and traditional sputter deposition techniques with specific process conditions results in a barrier layer structure which provides excellent barrier properties and allows for metal/conductor filling of contact sizes down to 0.25 micron and smaller without junction spiking. Specifically, the film layers are deposited on a substrate in the following order: (a) a first layer of a barrier metal (M), deposited by IMP sputter deposition; (b) a second layer of an oxygen-stuffed barrier metal (MOx), an oxygen-stuffed nitride of a barrier metal (MNOx), or a combination thereof; (c) a third layer of a nitride of a barrier metal (MNx), deposited by IMP sputter deposition of the barrier metal in the presence of nitrogen; and (d) a fourth, wetting layer of a barrier metal, deposited by traditional sputter deposition. The first layer of barrier metal can optionally be annealed to form a silicide of the barrier metal (MSi2) in order to reduce contact resistance and interdiffusion of the silicon and metal/conductor which may result form overetching of contacts. An additional layer of barrier metal can optionally be deposited between the second oxygen-stuffed layer and the third barrier metal nitride layer in order to further improve the barrier properties of the barrier layer structure and to provide for better metal/conductor fill. A thin layer of metal/conductor may be deposited on the walls of the contact via by "long throw" sputter deposition prior to filling the via with metal/conductor in order to provide more uniform fill. The optimum process conditions for sputter deposition of the barrier layer structure of the invention are disclosed herein.
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申请公布号 |
US5985759(A) |
申请公布日期 |
1999.11.16 |
申请号 |
US19980028946 |
申请日期 |
1998.02.24 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KIM, EDWIN;NAM, MICHAEL;CHA, CHRIS;YAO, GONGDA;LEE, SOPHIA;DORLEANS, FERNAND;KOHARA, GENE Y.;FU, JIANMING |
分类号 |
C23C14/06;C23C14/08;C23C14/18;C23C14/32;H01L21/285;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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