| 摘要 |
PURPOSE: A circuit is provided which generates an internal power source voltage of a semiconductor memory device, where voltage level of the internal power source voltage can be varied after the fabrication of the memory device is completed. CONSTITUTION: A circuit(201) for generating an internal power source voltage comprises: a voltage dividing part(221) which comprises the first resistor part(223) and the second resistor part(225) connected between an internal power source voltage and a ground voltage in serial and generates an output voltage from a connection part of the first and the second resistor part; and a differential amplification part(211) which inputs an external power source voltage and a reference voltage and the output voltage of the voltage dividing part, and outputs the internal power source voltage by amplifying the difference between the reference voltage and the output voltage of the voltage dividing part. The circuit also comprises the first control part(231) which reduces the internal power source voltage level in response to the first control signal inputted from the external, being connected to the voltage dividing part, and the second control part(232) which reduces the internal power source voltage level in response to the second control signal inputted from the external, being connected to the voltage dividing part. Therefore, the circuit reduces the power consumption of the semiconductor memory device and improves the operation speed.
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