| 摘要 |
<p>#CMT# #/CMT# The device has a set of components formed on a substrate (100), and superimposed metallic interconnection levels (N1-N3) for interconnecting the components. The levels are located in insulating layers (160, 165) placed on the substrate, where the level (N2) has conductive zones (120a-120c) made of copper. The level (N3) is located on the level (N2) and comprises two other conductive zones made of copper and aluminum, respectively. The latter conductive zones are respectively connected to the conductive zones (120b, 120c). #CMT# : #/CMT# An independent claim is also included for a method for forming a micro-electronic device. #CMT#USE : #/CMT# Micro-electronic device for an image sensor or imager (claimed) e.g. complementary MOS image sensor or imager. #CMT#ADVANTAGE : #/CMT# The microelectronic device improves quantum efficiency, reduces crosstalk and improves angular response. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view of a micro-electronic device. N1-N3 : Metallic interconnection levels 100 : Substrate 120a-120c, 130c : Conductive zones 152 : Processing and control circuit 160, 165 : Insulating layers.</p> |
