发明名称 |
Electronic device for ESD protection |
摘要 |
An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor. |
申请公布号 |
US9401351(B2) |
申请公布日期 |
2016.07.26 |
申请号 |
US201514610173 |
申请日期 |
2015.01.30 |
申请人 |
STMicroelectronics SA |
发明人 |
Jimenez Jean;Heitz Boris;Bourgeat Johan;Monroy Aguirre Agustin |
分类号 |
H01L27/00;H01L27/02;H01L27/12;H01L27/102;H01L29/74;H01L29/87 |
主分类号 |
H01L27/00 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. An electronic device, comprising:
a semiconductor-on-insulator substrate that includes a semiconductor film disposed over an insulating layer, the insulating layer being disposed over a carrier substrate; a thyristor disposed in the semiconductor film, the thyristor having an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side, the first and second bipolar transistors being nested and connected between the anode and the cathode; and a MOS transistor disposed in the semiconductor film, the MOS transistor coupled between a collector region and an emitter region of the second bipolar transistor, the MOS transistor having a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor. |
地址 |
Montrouge FR |