发明名称 Electronic device for ESD protection
摘要 An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.
申请公布号 US9401351(B2) 申请公布日期 2016.07.26
申请号 US201514610173 申请日期 2015.01.30
申请人 STMicroelectronics SA 发明人 Jimenez Jean;Heitz Boris;Bourgeat Johan;Monroy Aguirre Agustin
分类号 H01L27/00;H01L27/02;H01L27/12;H01L27/102;H01L29/74;H01L29/87 主分类号 H01L27/00
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. An electronic device, comprising: a semiconductor-on-insulator substrate that includes a semiconductor film disposed over an insulating layer, the insulating layer being disposed over a carrier substrate; a thyristor disposed in the semiconductor film, the thyristor having an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side, the first and second bipolar transistors being nested and connected between the anode and the cathode; and a MOS transistor disposed in the semiconductor film, the MOS transistor coupled between a collector region and an emitter region of the second bipolar transistor, the MOS transistor having a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.
地址 Montrouge FR