| 摘要 |
FIELD: computer engineering. SUBSTANCE: device has semiconductor first-type substrate which has drain- source regions of transistors of second conductance type, semiconductor second-type region which is located above layer of separating dielectric and has drain-source regions of transistors of first conductance type, layers of thin dielectric , metal power supply line, which is connected to source regions of transistors of first conductance type, zero potential metal line which is located above source region of transistor of second conductance type and which is connected to it and to semiconductor first-type substrate. In addition device has polysilicon gates of transistors of first and second conductance types which are located in parallel to power supply line and zero potential line which are L-shaped. In addition device has two input regions which contain areas of polysilicon gates and drain source regions of transistors of first and second conductance type, as well as pieces of metal power supply line and zero potential line. In addition device has two input metal lines which are located above element regions in perpendicular to power supply line and zero potential line and which are connected to polysilicon gates of transistors of first and second conductance type. In addition device has output region which contains areas of polysilicon gates and drain-source regions of transistors of transistors of first and second conductance type, as well as pieces of metal supply line and zero potential line. In addition device has output metal line which is located above device regions in perpendicular to power supply line and zero potential line and which is connected to drain regions of transistors of first conductance type and to drain region of transistor of second conductance type. In addition device has transit region which has transit metal wire. Input, output and transit regions are of equal size. EFFECT: decreased size, increased speed, increased stability to noise, possibility for automatic design. |
