| 摘要 |
PURPOSE:To facilitate to form in minute regions patterns with favorable dimentional accuracy and suitable for production of LSI's, by irradiating ion beams on a solid layered structure containing first and second elements different from each other for selectively forming regions containing a third element different from the first and second ones, and by removing selectively by etching the regions other than the regions containing the third element. CONSTITUTION:On an Si substrate 2 as the first layer, deposited is a metal layer 2 as the second layer which is rediated with ion beams 8 for providing regions 6 for forming gate electrodes as the third layer penetrating in the uppermost portion of the substrate 1. The metal layer 5 consisting of the layer 2 present between the regions 6 is removed by etching while leaving the regions 6 only. A source region (S) and a drain region (D) are formed by diffusion in the upper portion of the substrate 1 exposed on the both sides of each region 6. In such a manner, it is facilitated to obtain a submicron accuracy and is enabled to obtain a pattern with good reproducibility. |
