| 摘要 |
PURPOSE: To provide a method of manufacturing a semiconductor laser array, which lessens an irregularity in the characteristics of each resonator and integrates a diffraction grating, an optical waveguide layer, active layers and a clad layer on a substrate in a wide wavelength range. CONSTITUTION: A laser array is constituted of an LD 1 and an LD 2. The array is mainly constituted of a diffraction grating, 100, an InGaAsP optical waveguide layer 12, active layers 31 and 32 and a P-type InP clad layer on an N-type InP substrate 11. The active layers are active layers 31 and 32, which are respectively formed into a multiple quantum well structure consisting of InGaAsP well and barrier layers having layer thicknesses different from each other. Here, the MQW active layer 31 consists of well layers 33 of a layer thickness of 50Åand barrier layers 34 of a layer thickness of 50Åas the enlarged figure of the layer 31 is shown in a diagram D and the MQW active layer 32 consists of well layers 35 of a layer thickness of 100Åand barrier layers 36 of a layer thickness of 100Åas the enlarged figure of the layer 32 is shown in a diagram E. In this case, the pitch of the diffraction grating is the same to both layers 31 and 32. In such a way, the structure of each resonator constituting the array can be formed by the one-time formation of the diffraction grating and a one-time epitaxial growth.
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