| 摘要 |
PROBLEM TO BE SOLVED: To separate a GaN device on a lattice-mismatched substrate without impairing visual appearance and without damaging an electric contact or a bonding pad. SOLUTION: This method for separating a semiconductor device comprising a step of providing a substrate having one or more epitaxial layers on its upper surface, a step of forming a trench in one or more epitaxial layers, and a step of forming a scribe line on the surface of the substrate, is characterized by comprising a step where the position of the scribe line corresponds to the position of the trench and a step of separating the semiconductor device by dividing the wafer along the scribe line.
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