| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an Si crystal semiconductor thin film on an insulating substrate such as glass or a substrate of a semiconductor, a metal or the like at a temperature not higher than the melting point of Si. SOLUTION: A Zn-Si binary alloy formed on a substrate 1 is used as a starting material. An Si thin film 4-1 supported by the substrate is formed through deposition of Si in a thermal equilibrium state from a state of liquid or supercooled liquid, cooling/solidification of residual Zn, and removing of the solidified Zn by etching or the like. COPYRIGHT: (C)2008,JPO&INPIT
|
