| 摘要 |
PURPOSE:To dissolve an influence of water content almost completely by using a coat of three-layer structure coming in Si3N4 film, PSG film and Si3N4 film for protection of the surface of a semiconductor substrate with wiring formed thereon. CONSTITUTION:An SiO2 film 12 is fixed on an Si substrate 11, an Al wiring and a bonding pad part 13 are formed thereon, the overall surface is covered with a protecting film, the pad part 13 is exposed by providing an opening, and the following film of three-layer structure is used for the protecting film. Namely, an Si3N4 film 14, a PSG film 15 and an Si3N4 film 16 are built up through plasma CVD process and grown on the overall surface including the Al wiring, the pad part 13 and the exposed film 12. If, in this constitution, the PSG film 15 which is not satisfactory in water resistance is used, the Si3N4 film 14 works effectively with water resistance as underlayer, thus dissolving an evil influence of water content almost completely. |
