| 发明名称 |
Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element. |
| 摘要 |
<p>A compound semiconductor material includes GaxA l 1-xN (wherein 0 </= x </= 1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes GaxA l 1-xN (wherein 0 </= x </= 1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a GaxA l 1-xN (wherein 0 </= x </= 1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.</p> |
| 申请公布号 |
EP0377940(A2) |
申请公布日期 |
1990.07.18 |
| 申请号 |
EP19890310004 |
申请日期 |
1989.09.29 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OHBA, YASUO INTELLECTUAL PROPERTY DIVISION;IZUMIYA, TOSHIHIDE INTELLECTUAL PROPERTY DIVISION;HATANO, AKO INTELLECTUAL PROPERTY DIVISION |
| 分类号 |
H01L33/00;H01L33/04;H01L33/06;H01L33/32;H01S5/323;H01S5/343 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
