发明名称 Plasma CVD system comprising plural upper electrodes
摘要 A diode parallel-plate plasma CVD system has semiconductor wafers are mounted with each of the front surfaces thereof being downwardly directed. The plasma CVD system includes an insulating wafer holder and conductive upper electrodes each being adapted to cover back surface of the semiconductor wafer, thereby forming a film to reduce internal stress and improve energy efficiency.
申请公布号 US5296037(A) 申请公布日期 1994.03.22
申请号 US19920901764 申请日期 1992.06.17
申请人 发明人
分类号 C23C16/50;C23C16/509;H01J37/32;H01L21/205;H01L21/31;H01L21/318;H01L21/683;(IPC1-7):C23C16/50 主分类号 C23C16/50
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