| 摘要 |
PURPOSE:To enable the epitaxial growth of wurtzite crystal onto a zincblende crystal substrate by providing it with a heterojunction build-up part where strain superlattice layer consisting of two or more kinds of II-IV compound semiconductors is formed directly on a substrate. CONSTITUTION:Using a decompressed MOCVD method, a high quality of ZnCdS- ZnS strain superlattice, which exhibits notable quantum confinement effect, is formed directly on a semiconductor substrate of CaAs, or the like. In this semiconductor device, it can be performed naturally to make use of the II-IV compound semiconductor strain superlattice formed directly on the semiconductor substrate, as a nonlinear optical active layer. By forming the distorted superlattice heterojunction build-up layer of II-IV compound semiconductor directly on the semiconductor substrate this way, a good quality of epitaxial growth crystal can be attained. |
