| 摘要 |
A GaN-series of light emitting diode with high light extraction efficiency includes a substrate, a n-type semiconductor, a light emitting layer and a p-type semiconductor layer. More particular, the p-type semiconductor layer includes a p-type cladding layer, a p-type transition layer and a p-type ohmic contact layer, wherein the p-type transition layer is formed on the p-type cladding layer and the p-type ohmic contact layer is formed on the p-type transition layer. A doping concentration of magnesium of the p-type ohmic contact layer is between the p-type cladding layer and the p-type transition layer thereof that is to form the strain among three layers of the p-type semiconductor layer. Hence, a surface (the p-type ohmic contact layer) of the p-type semiconductor layer has a non-hexagonal texture, which interruptes the optical waveguide effect to increase external quantum efficiency and operation life of the light emitting diode.
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