| 摘要 |
PURPOSE:To enhance the heat resistance of an amorphous series Si by adding at least one of C, N and O to an amorphous or fine crystalline amorphous series Si. CONSTITUTION:At least one of C, N and O is added to an amorphous series Si film 3. Thus, the heat resistance of the film 3 is improved, and even if a crystalline series Si film 4 is formed on the film 3 at a high temperature, the quality of the film 3 is not deteriorated, and characteristics as a photovoltaic device can be improved. When the C, N or O is added to the film 3, if it is excessively added, the resistance value of the film 3 is raised, and the current characteristic of the device is deteriorated. Thus, the adding ratio of C is preferably 60% or less, the adding ratio of N is preferably 20% or less, and the adding ratio of O is preferably 5% or less. |
