发明名称 |
A METHOD OF MANUFACTURING A HIGH VOLTAGE GaN-AlN BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE |
摘要 |
The present invention is directed to a technique for manufacturing semiconductor devices in which a one type GaN layer (2) is formed on a substrate (1) and semi-insulating AlN layer (3) is formed on one type GaN layer (2) with an opposite type GaN layer (4, 5) formed on the one type GaN layer (2) and partially below the AlN layer (4, 5). Highly efficient high power and high voltage semiconductor device are formed through this technique having better or similar properties to silicon type semiconductors. |
申请公布号 |
WO9724752(A2) |
申请公布日期 |
1997.07.10 |
申请号 |
WO1996IB01377 |
申请日期 |
1996.12.06 |
申请人 |
PHILIPS ELECTRONICS N.V.;PHILIPS NORDEN AB |
发明人 |
TASKER, NIKHIL, R.;MENSZ, PIOTR, M.;KHAN, BABAR, A. |
分类号 |
H01L29/20;H01L21/285;H01L21/335;H01L29/10;H01L29/51;H01L29/78;H01L29/786;H01L29/80 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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