| 摘要 |
<p>The transistor (80) comprises a substrate (81), a gate (82), a source (83), a drain (84), an insulating layer (85) and a semiconductor layer (86). The semiconductor layer is made up of microcrystalline hydrogenated silicon containing very little oxygen. The low oxygen content makes it possible to form a microcrystalline film with few defects requiring doping, which means it can be used for thin-film transistors. The typical oxygen content for such films is around 1018 atoms per cm3. The method consists in placing the substrate (81) in a deposition chamber, creating a vacuum in that chamber, purifying the deposition gases using purification means, introducing these purified gases into the chamber, then creating a plasma between two electrodes. A film coating of intrinsic microcrystalline silicon is then deposited on the substrate.</p> |
