| 摘要 |
PROBLEM TO BE SOLVED: To provide the film thickness measuring instrument which can remove the influence of variance in the film thickness of a ground film and improve film thickness measurement precision. SOLUTION: The device is equipped with a film thickness measurement part 30 which measures the intensity of spectral radiation or spectral reflection from a semiconductor wafer W, a storage part 40 which stores a data base generated on the basis of reference sample spectral radiation intensity or spectral reflection intensity before ground film formation on the semiconductor wafer W or measured sample spectral radiation intensity or spectral reflection intensity after the ground film formation on the semiconductor wafer W, and an arithmetic part 50 which calculates the film thickness of the top layer from the spectral radiation intensity or spectral reflection intensity in a process from the semiconductor wafer W in the process according to the data base stored in the storage part 40.
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