发明名称 |
SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT AND LANDING PAD STRUCTURE AND METHOD OF FORMING SAME |
摘要 |
A semiconductor integrated circuit device and method of forming same is disclosed and includes a silicon substrate having a field oxide region and spaced active region. First and second self-aligned contact window openings are associated with a respective field oxide region and active region. A dummy polysilicon landing pad is formed over the field oxide region and formed below the first self-aligned contact window opening. An operative polysilicon landing pad is formed above the dummy landing pad. A silicon nitride barrier layer is also formed during the process.
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申请公布号 |
US2002000601(A1) |
申请公布日期 |
2002.01.03 |
申请号 |
US19990451054 |
申请日期 |
1999.11.30 |
申请人 |
CHOI SEUNGMOO |
发明人 |
CHOI SEUNGMOO |
分类号 |
H01L21/8247;H01L21/60;H01L21/768;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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