发明名称 |
Semiconductor structure and process for fabricating same |
摘要 |
A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of an epitaxially grown oxide such as (A)y(TixM1-x)1-yO3, wherein A is an alkaline earth metal or a combination of alkaline earth metals and M is a metallic or semi-metallic element. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density. |
申请公布号 |
AU1458002(A) |
申请公布日期 |
2002.05.27 |
申请号 |
AU20020014580 |
申请日期 |
2001.10.15 |
申请人 |
MOTOROLA, INC. |
发明人 |
ZHIYI YU;JAMAL RAMDANI;RAVINDRANATH DROOPAD |
分类号 |
C30B25/18;C30B25/20;H01L21/28;H01L21/314;H01L21/316;H01L29/51 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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