SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

摘要

A structure and method comprises a deep sub-collector located in a first epitaxial layer and a doped region located in a second epitaxial layer, which is above the first epitaxial layer. The device further comprises a reach-through structure penetrating from a surface of the device through the first and second epitaxial layers to the deep sub-collector, and a trench isolation structure penetrating from a surface of the device and surrounding the doped region.