METHODS AND APPARATUS FOR TUNING A SET OF PLASMA PROCESSING STEPS
摘要
In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
申请公布号
WO2008049024(A1)
申请公布日期
2008.04.24
申请号
WO2007US81682
申请日期
2007.10.17
申请人
LAM RESEARCH CORPORATION;VAHEDI, VAHID;DAUGHERTY, JOHN E;SINGH, HARMEET;CHEN, ANTHONY
发明人
VAHEDI, VAHID;DAUGHERTY, JOHN E;SINGH, HARMEET;CHEN, ANTHONY