| 发明名称 |
STRUCTURE AND FORMATION METHOD OF FINFET DEVICE |
| 摘要 |
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a fin channel structure over the semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin channel structure. The semiconductor device structure further includes a source/drain structure adjacent to the fin channel structure and a doped region between the semiconductor substrate and the fin channel structure. In addition, the semiconductor device structure includes a blocking layer between the fin channel structure and the doped region. |
| 申请公布号 |
US2016204260(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201514592591 |
申请日期 |
2015.01.08 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
CHING Kuo-Cheng |
| 分类号 |
H01L29/78;H01L29/10;H01L29/423;H01L29/66;H01L21/02;H01L27/088;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure, comprising:
a semiconductor substrate; a fin channel structure over the semiconductor substrate; a gate stack covering a portion of the fin channel structure; a source/drain structure adjacent to the fin channel structure; a doped region between the semiconductor substrate and the fin channel structure; and a blocking layer between the fin channel structure and the doped region. |
| 地址 |
Hsin-Chu TW |
