发明名称 CONCENTRIC CAPACITOR STRUCTURE
摘要 A concentric capacitor structure generally comprising concentric capacitors is disclosed. Each concentric capacitor comprises a first plurality of perimeter plates formed on a first layer of a substrate and a second plurality of perimeter plates formed on a second layer of the substrate. The first plurality of perimeter plates extend in a first direction and the second plurality of perimeter plates extend in a second direction different than the first direction. A first set of the first plurality of perimeter plates is electrically coupled to a first set of the second plurality of perimeter plates and a second set of the first plurality of perimeter plates is electrically coupled to a second set of the second plurality of perimeter plates. A plurality of capacitive cross-plates are formed in the first layer such that each cross-plate overlaps least two of the second plurality of perimeter plates.
申请公布号 US2016204191(A1) 申请公布日期 2016.07.14
申请号 US201615075759 申请日期 2016.03.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LU Ying-Ta;LIN Chi-Hsien;LIAO Hsien-Yuan;CHEN Ho-Hsiang;YEH Tzu-Jin
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. A structure comprising: a semiconductor substrate comprising a first routing layer and a second routing layer; at least one concentric capacitor formed on the semiconductor substrate, wherein each of the at least one concentric capacitors comprises: a first plurality of capacitive perimeter plates formed in the first routing layer, the first plurality of capacitive perimeter plates extending in a first direction;a second plurality of capacitive perimeter plates formed in the second routing layer, the second plurality of capacitive perimeter plates extending in a second direction, wherein the second direction is different than the first direction, wherein a first set of the first plurality of capacitive perimeter plates is electrically coupled to a first set of the second plurality of capacitive perimeter plates to define an outer concentric capacitive plate, and wherein a second set of the first plurality of capacitive perimeter plates is electrically coupled to a second set of the second plurality of capacitive perimeter plates to define an inner concentric capacitive plate; and a first plurality of capacitive cross-plates formed in the first routing layer, the first plurality of capacitive cross-plates extending longitudinally in the first direction, wherein each of the first plurality of capacitive cross-plates at least partially overlaps the second plurality of capacitive perimeter plates formed in the second routing layer, and wherein each of the first plurality of capacitive cross-plates are electrically coupled to at least one of the second plurality of capacitive perimeter plates by a first set of inter-layer vias, thereby increasing a capacitance of the at least one concentric capacitor.
地址 Hsin-Chu TW