CMOS TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND SEMICONDUCTOR MODULE INCLUDING THE DEVICE

摘要

Provided are a CMOS transistor, a semiconductor device having the transistor, and a semiconductor module having the device. The CMOS transistor may include first and second interconnection structures respectively disposed in first and second regions of a semiconductor substrate. The first and second regions of the semiconductor substrate may have different conductivity types. The first and second interconnection structures may be disposed on the semiconductor substrate. The first interconnection structure may have a different stacked structure from the second interconnection structure. The CMOS transistor may be disposed in the semiconductor device. The semiconductor device may be disposed in the semiconductor module.

主权项

1. A semiconductor device comprising:
a substrate including a first region doped with a first conductivity type impurity and a second region doped with a second conductivity type impurity; a first insulating layer disposed on the substrate and including a first trench in the first region and a second trench in the second region; a first gate insulating layer disposed in the first trench; a first metal nitride layer disposed on the first gate insulating layer; a first concave-shaped metal containing layer disposed on the first metal nitride layer; a second concave-shaped metal containing layer disposed on the first concave-shaped metal containing layer; a first filling layer disposed on the second concave-shaped metal containing layer; a first capping layer disposed on the first filling layer in the first trench and filling the first trench; a second gate insulating layer disposed in the second trench; a second metal nitride layer disposed on the second gate insulating layer; a third concave-shaped metal containing layer disposed on the second metal nitride layer; a second filling layer disposed on the third concave-shaped metal containing layer; and a second capping layer disposed on the second filling layer in the second trench and filling the second trench, wherein a bottom surface of the first filling layer is disposed higher than a bottom surface of the second filling layer, the first capping layer includes a material having an etching rate different from that of the first insulating layer, and the second capping layer includes a material having an etching rate different from that of the first insulating layer.