| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve breakdown voltage without increasing saturated voltage.SOLUTION: A semiconductor device 10 includes: a first main power supply 46; a second main power supply 26; a first conductivity type first semiconductor region 40 (emitter region) which is electrically interengaged with the first main power supply 46; a first conductivity type second semiconductor region 20 which is electrically interengaged with the second main power supply 26; a second conductivity type third semiconductor region 30 (base region) arranged between the first semiconductor region 40 and the second semiconductor region 20 (collector region), for isolating the first semiconductor region 40 and the second semiconductor region 20; and depletion layer suppression regions 50a-50e arranged in the third semiconductor region 30, for suppressing extension of a depletion layer which extends to the third semiconductor region 30 when reverse bias voltage is applied between the second semiconductor region 20 and the third semiconductor region 30.SELECTED DRAWING: Figure 1 |
