Halbleiteranordnung

摘要

The MOS varactor type semiconductor has a stepped formation voltage dependent capacitor as a metallised surface on an insulating stepped layer wall construction. The various rings of the well construction have different dielectric constants to permit adjustment of the capactive value. The metallisation (11) covers all steps (7 to 10) in the layered well and the lower step (7) is immediately above the semiconductor device body (1).PS.