| 发明名称 |
SOLIDIFICATION OF RESIST MATERIAL |
| 摘要 |
An organic photoresist mask (4), used in the fabrication of semiconductor devices (1), is hardened before dry etching of a surface of the device (1). The hardening is carried out by exposure to an electron beam (6) and is intended to reduce the rate of erosion of the photoresist material (4) by the etchant. |
| 申请公布号 |
JPS58207044(A) |
申请公布日期 |
1983.12.02 |
| 申请号 |
JP19830080428 |
申请日期 |
1983.05.09 |
| 申请人 |
BURITEITSUSHIYU TEREKOMIYUNIKEESHIYONZU |
发明人 |
KURISUTOFUA JIYON PORAADO;RATSUSERU ARAN MOOGAN |
| 分类号 |
G03F7/40;G03F7/038;G03F7/20;H01L21/027 |
主分类号 |
G03F7/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
