发明名称 |
Process and structure for thin film transistor with aluminum contacts and nonaluminum metallization in liquid crystal displays |
摘要 |
A thin film FET switching element, particularly useful in liquid crystal displays, employs a set of special materials to ensure compatibility with the indium tin oxide of a pixel electrode layer used as transparent conductive material in liquid crystal display devices. These materials include the use of titanium as a gate electrode material and the use of aluminum as a material to enhance electrical contact between source and drain pads and an underlying layer of amorphous silicon. The apparatus and process of the present invention provide enhanced fabrication yield and device reliability.
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申请公布号 |
US4889411(A) |
申请公布日期 |
1989.12.26 |
申请号 |
US19890335262 |
申请日期 |
1989.04.10 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
PARKS, HAROLD G.;PIPER, WILLIAM W.;POSSIN, GEORGE E.;CASTLEBERRY, DONALD E. |
分类号 |
G02F1/1368;H01L21/28;H01L21/285;H01L21/336;H01L21/77;H01L21/84;H01L29/49;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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