发明名称 Address enable circuit in synchronous SRAM
摘要 A novel address enable circuit for use in a synchronous memory that includes a memory core. The address enable circuit includes an address latching circuit that outputs a synchronized address and latches a pre-decoded address when an input clock signal transitions from a first logical level to a second logical level so that the synchronized address identifies the pre-decoded address. The address enable circuit also includes a reset circuit that generates a reset signal that (1) does not indicate a reset when the latched chip enable signal indicates that the memory has been selected while the clock signal is at the second logical level, (2) indicates a reset when the latched chip enable signal indicates that the memory has not been selected while the clock signal is at the second logical level, and (3) does not indicate a reset while the clock signal is at the first logical level. The address latching circuit is reset when the reset signal indicates a reset so that the synchronized address identifies a disabled address that indicates that memory access to the memory core is disabled and is not reset when the reset signal does not indicate a reset.
申请公布号 US5848022(A) 申请公布日期 1998.12.08
申请号 US19970850717 申请日期 1997.05.02
申请人 INTEGRATED SILICON SOLUTION INC. 发明人 JIANG, YONG H.
分类号 G11C8/06;G11C8/18;(IPC1-7):G11C8/00 主分类号 G11C8/06
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