| 摘要 |
The present invention relates to a precharge/discharge nonvolatile memory circuit for detecting signals output from two bit lines on read-cell and dummy cell sides using a flip-flop circuit, comprising a first row decoder (11) on the read-cell side, a second row decoder (11) on the dummy-cell side, a first column decoder (14-1) on the read-cell side, a second column decoder (14-2) on the dummy-cell side, a read cell (12) selected by the first row decoder (11) and the first column decoder (14-1), a dummy cell (15) selected by the second row decoder (11) and the second column decoder (14-2), first and second precharge transistors (P1, P2) for performing a precharge operation, first and second discharge transistors (D1, D2) for performing a discharge operation, the flip-flop circuit (18), a discharge control circuit (21) for generating a discharge signal, and a precharge control circuit (22) for generating a precharge signal after the discharge signal is generated from the discharge control circuit (21). <IMAGE> |
