| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacture method of a semiconductor device, which can suppress occurrence of peeling remainder in a connection hole, when the connection hole is formed in an interlayer insulating film. SOLUTION: This manufacture method of a semiconductor device includes a process of forming a TiN film 3 on a first Al wiring 1, a process of forming an interlayer insulating film 10 formed of an NSG(SiO2) film 5, an inorganic SOG film 7 and an NSG(SiO2) film 9 on the TiN film 3, a process for forming a resist film on the interlayer insulating film 10, a process for forming a via hole 10a in the interlayer insulating film 10 through dry-etching of the interlayer insulating film 10, by using the process gas of CF4/CHF3/Ar to which N2 gas is added with the resist film as a mask, a process for embedding a W plug 15 in the via hole 10a and a process for forming a second Al wiring 17 on the W plug 15.
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