| 摘要 |
<p>Disclosed is a film-forming and cleaning method comprising a temperature-adjusting step between a film-forming step and a cleaning step. In the film-forming step, a processing gas is supplied into a process chamber (1) and a film is formed on a substrate (W) in the process chamber (1), while heating a first region (4) of the process chamber (1) to a first temperature (for example, to 200°C) and heating a second region (side wall) of the process chamber (1) to a second temperature (for example, to 90°C) which is lower than the first temperature. In the temperature-adjusting step, the temperature of the first region (4) is lowered close to the second temperature. In the cleaning step, a cleaning gas is supplied into the process chamber (1) for removing deposit adhering to the surfaces of the first and second regions.</p> |
