发明名称 |
Diode and memory device comprising the same |
摘要 |
Provided are a diode and a memory device comprising the diode. The diode includes a p-type semiconductor layer and an n-type semiconductor layer, wherein at least one of the p-type semiconductor layer and the n-type semiconductor layer comprises a resistance changing material whose resistance is changed according to a voltage applied to the resistance changing material. |
申请公布号 |
US2009072246(A1) |
申请公布日期 |
2009.03.19 |
申请号 |
US20080076308 |
申请日期 |
2008.03.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
GENRIKH STEFANOVICH;KANG BO-SOO;PARK YOUNG-SOO;WENXU XIANYU;LEE MYOUNG-JAE;AHN SEUNG-EON;LEE CHANG-BUM |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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