METHOD TO MANUFACTURE LARGE UNIFORM INGOTS OF SILICON CARBIDE BY SUBLIMATION/CONDENSATION PROCESSES
摘要
This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500 °C; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).
申请公布号
WO2009075935(A1)
申请公布日期
2009.06.18
申请号
WO2008US79126
申请日期
2008.10.08
申请人
DOW CORNING CORPORATION;LOBODA, MARK;PARK, SEUNG-HO;TORRES, VICTOR