LED with radiation surface restricted by ion implantation - has substrate transparent to radiation and has refraction structure at emitting surface

摘要

The diode emits light according to the Lambert law. Galium arsenide is used as a starting material for the substrate epitaxi. The basic semiconductor material is transparent for the generated radiation. Its surface for the radiation output has a defractive and/or refractive structure. The dimensions of the structure, in relation to the locally different impinging angle of the spatially angular radiation provides outwards parallel radiation. The structure is preferably deposited in the semiconductor substrate, which serves as a support for different materials whose expansion coefficient matches the substrate material as far as the radiation transparency and refractive index are concerned.