| 摘要 |
PURPOSE:To prevent deteriorating of a luminous efficiency, by a method wherein an active layer, consisting of a InGaAsP crystal, is grown at a temperature higher than a given value, a cover layer consisting of a crystal of a given component is grown on the active layer at a temperature below the given value, and a melt-back takes place after temperature falls. CONSTITUTION:An active layer, consisting of a InGaAs crystal and having a wave length of 1.5mum or more, is grown on a InP substrate at 630 deg.C or more. A cover layer consists of a InGaAs being longer than a wave length of 1.63mum is then formed, and temperature is caused to fall rapidly. A cover layer, consisting of a InGaAs ternary crystal or a InGaAs quaternary crystal having an organization similar to the ternarycrystal, is formed on the active layer. After temperature is decreased by 20 deg.C or more in a condition that the cover layer is left as it is, a melt back takes place to obtain a double hetrostructure. |
