发明名称 PRODUCTION OF COMPOUND OXIDE THIN FILM
摘要 PROBLEM TO BE SOLVED: To eliminate problems in difficulties of synthesis of a thin film at low temperatures due to the nonuniformity of a composition caused at the molecular level and insufficient production of a perovskite crystal. SOLUTION: This method for producing a compound oxide thin film comprises using an Mg compound and a W compound, synthesizing an MgW complex alkoxide stably present even in the coexistence of an alkaline earth metallic compound, then mixing the resultant MgW complex alkoxide with an alkaline earth metallic compound, synthesizing a coating solution, coating the surface of a substrate with the coating solution and baking the resultant gel film. For example, refluxing operations of the Mg compound which is a carboxylate and the W compound are performed or the Mg compound that is an alkoxide and the W compound are used to thereby synthesize the MgW complex alkoxide. The stabilizing treatment is then carried out to synthesize the MgW complex alkoxide stably present even in the coexistence of the alkaline earth metallic compound.
申请公布号 JPH09268059(A) 申请公布日期 1997.10.14
申请号 JP19960077852 申请日期 1996.03.29
申请人 KYOCERA CORP 发明人 NAGAKARI TAKANORI;NISHIOKA YASUHIKO
分类号 C04B35/00;C01B13/32;C01G41/00;C04B35/495;H01B3/00;H01B13/00;H01G4/12;H01P7/10 主分类号 C04B35/00
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