摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory for enhancing the degree of freedoms of designing a layout capable of driving at a low voltage without using a charge pump for a high voltage decoder. SOLUTION: A row decoder supplies a voltage of a power source voltage or lower to a source line S and a word line WL in response to rewriting, erasing or reading of data for a memory cell of an EEPROM. The one decoder is provided for a line group of two word lines WLO, WL1 and one common source line S1 as one set. A plurality of high voltage decoders 104 for supplying high voltages from a high voltage generator 110 to the line group are provided. The high voltage decoder 104 has a p-type semiconductor switch 120 for connecting an output of the generator 110 to a midway of a supply line to the word line and the common source, and a level shifter 130 for turning ON, OFF the switch 120 based on the output of the row decoder. The shifter 130 has a first n-type semiconductor switch 132, a first p-type semiconductor switch 134 and a second p-type semiconductor switch 136.</p> |