发明名称 |
CRYSTAL GROWING METHOD AND CRYSTAL GROWING APPARATUS |
摘要 |
A crystal growing apparatus comprises a solid-state device (22) having a region (22a) where valence electrons are so controlled that the density of holes or electrons in the surface portion is controlled according to the environment of a solution (23) containing a polymer compound and a heat-generating device (24) disposed near the region (22a). The region (22a) is an impurity region formed on a silicon semiconductor substrate. The heat-generating device (24) includes a Cr heating wire. A crystal growing method comprises heating a solution (23) by means of a heat-generating device (24). A crystal of a polymer compound is grown in the heated solution (23) in an electric state given to the surface of a region (22a). |
申请公布号 |
WO0009786(A1) |
申请公布日期 |
2000.02.24 |
申请号 |
WO1999JP04361 |
申请日期 |
1999.08.11 |
申请人 |
SUMITOMO METAL INDUSTRIES, LTD.;SANJOH, AKIRA |
发明人 |
SANJOH, AKIRA |
分类号 |
C08J3/00;C30B7/00;C30B29/58 |
主分类号 |
C08J3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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