| 摘要 |
PROBLEM TO BE SOLVED: To establish compatibility for both high light-emitting efficiency at high temperature and low operating voltage, in various type of semiconductor lasers. SOLUTION: A semiconductor optical element comprises a laminated structure of an active layer, an n-type optical waveguide layer (n-type clad layer) and a p-type optical waveguide layer (p-type clad layer), so that the valence band offset of an interface between the active layer and the n-type optical waveguide layer and a conduction band offset of an interface between the active layer and the p-type optical waveguide layer (p-type clad layer) are large, and the n-type and p-type optical waveguide layers and the active layers do not form a hetero-interface, which becomes an energy barrier by electrons and holes which are to be implanted from an electrode. In the semiconductor laser, having an InGaAlAs active layer using an InP substrate, an n-type clad layer making direct contact with the active layer is made of InP or InGaAsP, and a p-type optical waveguide layer making direct contact with the active layer is made of an InGaAlAs or an InAlAs.
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